北京京北通宇电子元件有限公司

功率MOSFET N沟道 500W VHF 双管推挽式

晶体管类型:                             RF MOSFET
电压, Vds :                        125V
电流, Id 连续:                          18A
功耗, Pd:                                 500W
工作频率范围:                          400MHz 到 520MHz
封装类型:                                 SOT-262A1
针脚数:                                    5
SVHC(高度关注物质):                No SVHC (19-Dec-2011)
功率, Pd:                                  500W
功耗:                                       500W
在电阻RDS（上）:                    200mohm
存储温度, :                         -65°C
存储温度, :                         150°C
封装类型:                                  SOT-262A1
封装类型:                                  SOT-262A1
晶体管极性:                              ñ频道
功耗:                                  500W
漏极电流, Id 值:                   18A
电压 @ Rds测量:                        10V
电压 Vgs @ Rds on 测量:             10V
电压, Vds:                                  125V
电压, Vgs :                           20V
结温, Tj :                             200°C
阈值电压, Vgs th :                2V
阈值电压, Vgs th :                4.5V